David Drabold

David Alan Drabold (born 13 February 1960) is an American physicist, currently Edwin and Ruth Kennedy Distinguished Professor[1] at Ohio University.

Early life

Born in Akron, Ohio to Walter Drabold Jr. and Marjorie Jane Ruthenberg. Drabold was raised in Cuyahoga Falls, Ohio.

Education

Drabold received a B.S. in Applied Mathematics from the University of Akron in 1982, and a PhD. in Physics from Washington University in St. Louis under the supervision of Peter Fedders. He was also significantly influenced by E. T. Jaynes. He held term appointments in Physics at the University of Notre Dame, where his key mentor was Otto F. Sankey and both Materials Science and Engineering and Physics at the University of Illinois at Urbana-Champaign, where his key mentor was Richard M. Martin.

Research

Drabold took a tenure track appointment at Ohio University in 1993. He is a theoretical physicist working primarily in condensed matter physics, materials science, and computational physics with an emphasis on amorphous, paracrystalline and glassy materials,[2] including more than 100 works involving amorphous silicon.

He is known for elucidating the consequences of structural or thermal disorder for electronic, optical and transport properties.[3] His published research includes about 300 works. He is a Fellow of the American Physical Society (in the Division of Materials Physics in 2003),[4] (citation: For fundamental contributions to the physics of non-crystalline materials and development of efficient first-principles electronic structure methods) a Fellow of the Institute of Physics and Fellow of the Royal Numismatic Society.[5] He has mentored 22 Ph.D. students to date. A Festschrift volume was published[6] commemorating his sixtieth birthday.

Drabold has made contributions to the electronic structure of disordered materials by direct computation of band tail states and Anderson transition for realistic models of materials[7], generalized Wannier functions from projection[8], and the atomistic origin of Urbach tails[9]. He has also emphasized the importance of the electron-phonon coupling for localized and partly localized states[10]. Drabold, Fedders and others also published quantum simulations of photodegradation (Staebler-Wronski effect) in hydrogenated amorphous silicon[11]. He has also published several papers on doping of amorphous phases of carbon[12] and silicon[13].[1]

Drabold has introduced several useful methods, among them a maximum entropy technique for linear scaling computation of electronic structure and total energies[14] most recently applied to a system with over 2 million atoms[15]. Techniques for real space decomposition of the electrical[16] and thermal conductivities[17] based on Kubo formulae have also appeared.

He has been Visiting Fellow Commoner in Trinity College, Cambridge,[18] and is a life member of Clare Hall, Cambridge. He was Leverhulme Visiting Professor of Chemistry at the University of Cambridge in 2008.[19]

Selected publications

Origins of structural and electronic transitions in disordered silicon[20]

Signatures of paracrystallinity in amorphous silicon from machine-learning-driven molecular dynamics[21]

Maximum entropy approach for linear scaling in the electronic structure problem[22]

Unconstrained minimization approach for electronic computations that scales linearly with system size[23]

Order-𝑁 projection method for first-principles computations of electronic quantities and Wannier functions[24]

Energetics of Large Fullerenes: Balls, Tubes, and Capsules[25]

Ab Initio Simulation of Amorphous Graphite[26]

Theory of Defects in Semiconductors (with S. K. Estreicher), Springer (2007).[27]

References

  1. ^ "Ohio University Outlook". www.ohio.edu. Archived from the original on 2008-07-04. Retrieved 2017-06-30.
  2. ^ "Specific Materials". Materials Theory Group: Ohio University. 2024-04-30. Retrieved 2025-07-11.
  3. ^ "Physicists, mathematicians turn to blackboards to answer universal questions". Retrieved 2021-06-21.
  4. ^ "APS Fellow Archive". www.aps.org. Retrieved 2017-06-30.
  5. ^ CRIBB, JOE (2009). "Proceedings". The Numismatic Chronicle. 169: 531–556. JSTOR 42678641.
  6. ^ Biswas, Parthapratim; Chen, Gang; Nakhmanson, Serge; Dong, Jianjun (2021). "Form and Function of Disorder". Physica Status Solidi B. 258 (9) 2100366. Bibcode:2021PSSBR.25800366D. doi:10.1002/pssb.202100366. ISSN 1521-3951.
  7. ^ Dong, Jianjun; Drabold, D. A. (1998-03-02). "Atomistic Structure of Band-Tail States in Amorphous Silicon". Physical Review Letters. 80 (9): 1928–1931. doi:10.1103/PhysRevLett.80.1928. ISSN 0031-9007. Archived from the original on 2025-06-27.
  8. ^ Stephan, Uwe; Drabold, David A. (1998-03-15). "Order-𝑁 projection method for first-principles computations of electronic". Physical Review B. 57 (11): 6391–6407. doi:10.1103/PhysRevB.57.6391. ISSN 0163-1829. Archived from the original on 2024-09-19.
  9. ^ Pan, Y.; Inam, F.; Zhang, M.; Drabold, D. A. (2008-05-21). "Atomistic Origin of Urbach Tails in Amorphous Silicon". Physical Review Letters. 100 (20). arXiv:0802.1292. doi:10.1103/PhysRevLett.100.206403. ISSN 0031-9007. Archived from the original on 2025-06-27.
  10. ^ Atta-Fynn, Raymond; Biswas, Parthapratim; Drabold, D. A. (2004-06-25). "Electron–phonon coupling is large for localized states". Physical Review B. 69 (24). arXiv:cond-mat/0401066. doi:10.1103/PhysRevB.69.245204. ISSN 1098-0121. Archived from the original on 2026-03-03.
  11. ^ Fedders, P. A.; Fu, Y.; Drabold, D. A. (1992-03-23). "Atomistic origins of light-induced defects in a -Si". Physical Review Letters. 68 (12): 1888–1891. doi:10.1103/PhysRevLett.68.1888. ISSN 0031-9007.
  12. ^ Stumm, P.; Drabold, D. A.; Fedders, P. A. (1997-02-01). "Defects, doping, and conduction mechanisms in nitrogen-doped tetrahedral amorphous carbon". Journal of Applied Physics. 81 (3): 1289–1295. doi:10.1063/1.363907. ISSN 0021-8979. Archived from the original on 2024-09-25.
  13. ^ Pandey, A.; Cai, B.; Podraza, N.; Drabold, D. A. (2014-11-07). "Electrical Activity of Boron and Phosphorus in Hydrogenated Amorphous Silicon". Physical Review Applied. 2 (5). doi:10.1103/PhysRevApplied.2.054005. ISSN 2331-7019. Archived from the original on 2024-08-04.
  14. ^ Drabold, David A.; Sankey, Otto F. (1993-06-07). "Maximum entropy approach for linear scaling in the electronic structure problem". Physical Review Letters. 70 (23): 3631–3634. doi:10.1103/PhysRevLett.70.3631. ISSN 0031-9007. Archived from the original on 2026-02-17.
  15. ^ Deringer, Volker L.; Bernstein, Noam; Csányi, Gábor; Ben Mahmoud, Chiheb; Ceriotti, Michele; Wilson, Mark; Drabold, David A.; Elliott, Stephen R. (January 2021). "Origins of structural and electronic transitions in disordered silicon". Nature. 589 (7840): 59–64. doi:10.1038/s41586-020-03072-z. ISSN 1476-4687.
  16. ^ Subedi, Kashi N.; Prasai, Kiran; Drabold, David A. (September 2021). "Space‐Projected Conductivity and Spectral Properties of the Conduction Matrix". physica status solidi (b). 258 (9). doi:10.1002/pssb.202000438. ISSN 0370-1972.
  17. ^ Ugwumadu, Chinonso; Gautam, Aashish; Lee, Yoon Gyu; Drabold, David A. (January 2026). "Mapping Thermal Conductivity at the Atomic Scale: A Step toward the Thermal Design of Materials". physica status solidi (b). 263 (1). arXiv:2506.10041. doi:10.1002/pssb.202500316. ISSN 0370-1972.
  18. ^ "Trinity College Annual Record 2008 by Trinity College Cambridge - Issuu". issuu.com. 15 June 2008. Retrieved 2023-05-14.
  19. ^ "Grant listings | The Leverhulme Trust". www.leverhulme.ac.uk. Retrieved 2023-05-14.
  20. ^ Deringer, Volker L.; Bernstein, Noam; Csányi, Gábor; Ben Mahmoud, Chiheb; Ceriotti, Michele; Wilson, Mark; Drabold, David A.; Elliott, Stephen R. (2021). "Origins of structural and electronic transitions in disordered silicon". Nature. 589 (7840): 59–64. Bibcode:2021Natur.589...59D. doi:10.1038/s41586-020-03072-z. PMID 33408379. S2CID 244961379. Retrieved 2021-06-21.
  21. ^ Rosset, Louise A. M.; Drabold, David A.; Deringer, Volker L. (2025-03-10). "Signatures of paracrystallinity in amorphous silicon from machine-learning-driven molecular dynamics". Nature Communications. 16 (1): 2360. Bibcode:2025NatCo..16.2360R. doi:10.1038/s41467-025-57406-4. ISSN 2041-1723. PMC 11894222. PMID 40064884.
  22. ^ Drabold, David A.; Sankey, Otto F. (1993-06-07). "Maximum entropy approach for linear scaling in the electronic structure problem". Physical Review Letters. 70 (23): 3631–3634. Bibcode:1993PhRvL..70.3631D. doi:10.1103/PhysRevLett.70.3631. PMID 10053923.
  23. ^ Ordejón, Pablo; Drabold, David A.; Grumbach, Matthew P.; Martin, Richard M. (1993-11-15). "Unconstrained minimization approach for electronic computations that scales linearly with system size". Physical Review B. 48 (19): 14646–14649. Bibcode:1993PhRvB..4814646O. doi:10.1103/PhysRevB.48.14646. PMID 10007888.
  24. ^ Stephan, Uwe; Drabold, David A. (1998-03-15). "Order-$N$ projection method for first-principles computations of electronic quantities and Wannier functions". Physical Review B. 57 (11): 6391–6407. Bibcode:1998PhRvB..57.6391S. doi:10.1103/PhysRevB.57.6391.
  25. ^ Adams, Gary B.; Sankey, Otto F.; Page, John B.; O'Keeffe, Michael; Drabold, David A. (1992). "Energetics of Large Fullerenes: Balls, Tubes, and Capsules". Science. 256 (5065): 1792–1795. Bibcode:1992Sci...256.1792A. doi:10.1126/science.256.5065.1792. PMID 17743034. S2CID 23675780. Retrieved 2021-06-21.
  26. ^ Thapa, R.; Ugwumadu, C.; Nepal, K.; Trembly, J.; Drabold, D. A. (2022-06-10). "Ab Initio Simulation of Amorphous Graphite". Physical Review Letters. 128 (23) 236402. arXiv:2202.11021. Bibcode:2022PhRvL.128w6402T. doi:10.1103/PhysRevLett.128.236402. OSTI 1980292. PMID 35749197.
  27. ^ Drabold, David A.; Estreicher, Stefan K., eds. (2007). "Theory of Defects in Semiconductors". Topics in Applied Physics. 104. doi:10.1007/11690320. ISBN 978-3-540-33400-2. ISSN 0303-4216.