Dark current spectroscopy

Dark current spectroscopy is a technique that is used to determine contaminants in silicon.[1][2][3]

References

  1. ^ McColgin, W.C. (1992), Dark current quantization in CCD image sensors, Electron Devices Meeting, 1992, San Francisco, California, USA: IEEE Electron Devices Society
  2. ^ Mccolgin, William C.; Lavine, James P.; Stancampiano, Charles V. (1996-12-01). "Dark Current Spectroscopy of Metals in Silicon". MRS Online Proceedings Library. 442 (1): 187–192. doi:10.1557/PROC-442-187. ISSN 1946-4274.
  3. ^ Tivarus, C.; McColgin, W. C. "Dark Current Spectroscopy of Irradiated CCD Image Sensors". IEEE Transactions on Nuclear Science. 55 (3): 1719–1724. doi:10.1109/TNS.2008.919263. ISSN 1558-1578.


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